FDMS7676 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

General Description
* Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
* Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
* Advanced Package and Silicon design f.

Application

* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant This N-Channel MOSFET has been designed spe.

Description

* Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
* Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
* Advanced Package and Silicon design for low rDS(on) and high efficiency
* Next generation enhanced body diode technology, engineered f.

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